| PART |
Description |
Maker |
| HN27C4096HG-85 HN27C4096HCC HN27C4096HCC-85 HN27C4 |
262,144-word x 16-bit CMOS UV Erasable and Programmable ROM 262,144字16位CMOS紫外线可擦除只读存储
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TC55VZM216AJJI-08 TC55VZM216AFTI-08 TC55VZM216AFTI |
262,144-WORD BY 16-BIT CMOS STATIC RAM
|
TOSHIBA
|
| AK5362048W |
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| MSM521004 |
262,144-Word x 4-Bit CMOS STATIC RAM
From old datasheet system
|
OKI
|
| TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| 24C256 IS24C256 IS24C256-2G IS24C256-2GI IS24C256- |
262,144-bit 2-WIRE SERIAL CMOS EEPROM
262,144-bit 2-WIRE SERIAL CMOS EEPROM 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
DIODE ZENER 6.2V 120MW SSSMINI2
262/144-bit2-WIRESERIALCMOSEEPROM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
ETC
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| MSM54V16255A |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 262,144字16位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
|
| AK5361024W AK5362048W |
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CO...
|
| MSM54V16258A |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 262,144字16位动态随机存储器：快速页面模式型与江
|
OKI SEMICONDUCTOR CO., LTD.
|
| TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MR27V402ETP MR27V402E MR27V402EJA MR27V402EMP MR27 |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM
|
OKI[OKI electronic componets]
|
